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| PD- 95146 IRFB4710PBF IRFS4710PbF IRFSL4710PbF HEXFET(R) Power MOSFET Applications l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw VDSS 100V RDS(on) max 0.014 ID 75A TO-220AB IRFB4710 D2Pak IRFS4710 TO-262 IRFSL4710 Max. 75 53 300 3.8 200 1.4 20 8.2 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V V/ns C Thermal Resistance Parameter RJC RCS RJA RJA Notes through Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient are on page 11 Typ. --- 0.50 --- --- Max. 0.74 --- 62 40 Units C/W www.irf.com 1 04/22/04 IRFB/IRFS/IRFL4710PbF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 --- --- 3.5 --- --- --- --- Typ. --- 0.11 0.011 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.014 VGS = 10V, ID = 45A 5.5 V VDS = VGS, ID = 250A 1.0 VDS = 95V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 35 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 110 43 40 35 130 41 38 6160 440 250 1580 280 430 Max. Units Conditions --- S VDS = 50V, ID = 45A 170 ID = 45A --- nC VDS = 50V --- VGS = 10V, --- VDD = 50V --- ID = 45A ns --- R G = 4.5 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 80V, = 1.0MHz --- VGS = 0V, VDS = 0V to 80V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 190 45 20 Units mJ A mJ Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 75 --- --- showing the A G integral reverse --- --- 300 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 45A, VGS = 0V --- 74 110 ns TJ = 25C, IF = 45A --- 180 260 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFB/IRFS/IRFL4710PbF 1000 I D , Drain-to-Source Current (A) 100 10 1 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP 1000 100 VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP 10 6.0V 0.1 6.0V 20s PULSE WIDTH T = 25 C J 1 10 100 0.01 0.1 1 0.1 20s PULSE WIDTH T = 175 C J 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 75A I D , Drain-to-Source Current (A) 100 TJ = 175 C 2.5 2.0 10 1.5 TJ = 25 C 1 1.0 0.5 0.1 6.0 V DS = 50V 20s PULSE WIDTH 9.0 7.0 8.0 10.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFB/IRFS/IRFL4710PbF 10000 20 VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd Coss = C + C ds gd ID = 45A VGS , Gate-to-Source Voltage (V) 8000 16 VDS = 80V VDS = 50V VDS = 20V C, Capacitance(pF) 6000 Ciss 12 4000 8 2000 4 Coss 0 1 Crss 10 100 0 0 40 80 FOR TEST CIRCUIT SEE FIGURE 13 160 120 200 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) ID , Drain-to-Source Current (A) 100 100 100sec 10 TJ = 175 C 10 1 TJ = 25 C 1msec 1 Tc = 25C Tj = 175C Single Pulse 1 10 10msec 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 0.1 VSD ,Source-to-Drain Voltage (V) 100 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFB/IRFS/IRFL4710PbF 80 VDS VGS RD I D , Drain Current (A) 60 RG D.U.T. + -VDD 10V 40 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.0001 0.001 P DM t1 t2 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFB/IRFS/IRFL4710PbF 350 1 5V EAS , Single Pulse Avalanche Energy (mJ) 300 250 200 150 100 50 0 VD S L D R IV E R TOP BOTTOM ID 18A 32A 45A RG VV 2 0GS D .U .T IA S tp 0 .0 1 + - VD D A Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50K 12V .2F .3F 10 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFB/IRFS/IRFL4710PbF Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRFB/IRFS/IRFL4710PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 3 .7 8 (.1 4 9 ) 3 .5 4 (.1 3 9 ) -A 6 .4 7 (.2 5 5 ) 6 .1 0 (.2 4 0 ) -B 4 .6 9 (.1 8 5 ) 4 .2 0 (.1 6 5 ) 1 .3 2 (.0 5 2 ) 1 .2 2 (.0 4 8 ) 4 1 5 .24 ( .6 0 0 ) 1 4 .84 ( .5 8 4 ) 1 .1 5 (.0 4 5 ) M IN 1 2 3 L E A D A S S IG N M E N T S IGBTs, CoPACK 1 - GATE 2 - D R A IN 1- GATE 1- GATE 32- DRAINS O U R C E 2- COLLECTOR 3- SOURCE A IN 3- EMITTER 4 - DR LEAD ASSIGNMENTS HEXFET 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 4- DRAIN 4 .0 6 ( .1 6 0 ) 3 .5 5 ( .1 4 0 ) 4- COLLECTOR 3X 3X 1 .4 0 (.0 5 5 ) 1 .1 5 (.0 4 5 ) 0 .9 3 (.0 3 7 ) 0 .6 9 (.0 2 7 ) M BAM 3X 0 .5 5 (.0 2 2 ) 0 .4 6 (.0 1 8 ) 0 .3 6 (.0 1 4 ) 2 .5 4 (.1 0 0 ) 2X N O TE S : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H 2 .9 2 (.1 1 5 ) 2 .6 4 (.1 0 4 ) 3 O U TL IN E C O N F O R M S TO J E D E C O U T L IN E TO -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N TS D O NO T IN C L U D E B U R R S . TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F1010 LOT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN T HE AS S E MBL Y L INE "C" INT E RNAT IONAL RE CT IF IE R L OGO AS S E MB LY LOT CODE PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C 8 www.irf.com IRFB/IRFS/IRFL4710PbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H I S IS AN IR F 53 0S WIT H L OT COD E 80 24 AS S E MB L E D ON WW 0 2, 20 00 IN T H E AS S E MB L Y L INE "L " N ote: "P " in as s embly line pos ition indicates "L ead-F ree" IN T E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E P AR T N U MB E R F 53 0S D AT E COD E YE AR 0 = 2 00 0 WE E K 02 L IN E L OR IN T E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E P AR T N U MB E R F 530 S D AT E COD E P = D E S IGN AT E S L E AD -F R E E P R OD U CT (OP T ION AL ) Y E AR 0 = 2000 WE E K 02 A = AS S E MB L Y S IT E COD E www.irf.com 9 IRFB/IRFS/IRFL4710PbF TO-262 Package Outline TO-262 Part Marking Information E XAMPL E : T H IS IS AN IR L 3103L L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" Note: "P " in as s embly line pos ition indicates "L ead-F ree" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C OR INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R DAT E CODE P = DE S IGNAT E S L E AD-F R E E PR ODU CT (OPT IONAL ) YE AR 7 = 1997 WE E K 19 A = AS S E MB L Y S IT E CODE 10 www.irf.com IRFB/IRFS/IRFL4710PbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TR R 1 .60 (.0 6 3 ) 1 .50 (.0 5 9 ) 4 .10 (.16 1 ) 3 .90 (.15 3 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) F E E D D I R E C T IO N 1 .8 5 (.07 3 ) 1 .6 5 (.06 5 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (. 0 6 9 ) 1 .2 5 (. 0 4 9 ) 1 6 .1 0 ( .6 3 4 ) 1 5 .9 0 ( .6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) F E E D D IR E C T I O N 1 3 .5 0 (.5 3 2 ) 1 2 .8 0 (.5 0 4 ) 2 7 .40 (1 .0 7 9) 2 3 .90 (.9 4 1 ) 4 330.00 (14.173) M AX . 6 0 .0 0 (2 .3 6 2) M IN . N O TES : 1 . C O M F O R M S T O E IA- 4 1 8. 2 . C O N T R O L L IN G D IM E N S IO N : M ILL IM E T E R . 3 . D IM E N S IO N M E A S U R E D @ H U B . 4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 26.40 (1.039) 24.40 (.961) 3 3 0 .4 0 (1 .19 7 ) M AX. 4 Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25C, L = 190H RG = 25, IAS = 45A, VGS = 10V ISD 45A, di/dt 420A/s, VDD V(BR)DSS, TJ 175C This is only applied to TO-220AB package This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/04 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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